Title :
a-Si/poly-Si two- and four-terminal tandem type solar cells
Author :
Matsumoto, Y. ; Miyagi, K. ; Takakura, H. ; Okamoto, H. ; Hamakawa, Y.
Author_Institution :
Fac. of Eng. Sci., Osaka Univ., Japan
Abstract :
The theoretical and experimental design of a-Si/poly-Si tandem-type solar cells has been performed, and it is shown that the theoretical limit of their conversion efficiency is 25% under AM1.5, 100 mW/cm2 solar radiation. A series of experimental trials to find the optimum design parameters has been made on a-Si/poly-Si solar cells of both two- and four-terminal structures. Microcrystalline SiC/poly-Si heterojunctions prepared using electron cyclotron resonance (ECR) plasma chemical vapor deposition (CVD) as well as c-Si p-n junctions formed by the conventional thermal diffusion process have been fabricated, i.e., ITO/n-i-p a-Si n+ -p c-Si cells (two-terminal), ITO/p-i-n a-Si/p+ -n poly-Si cells (two terminal), and glass/ITO/p-i-n a-Si/ITO/ITO/p+-n poly-Si four-terminal cells. The best cell performance achieved was 16.8% on the four-terminal device. Technical data on both cell structures are discussed
Keywords :
amorphous semiconductors; elemental semiconductors; silicon; solar cells; 16.8 percent; 2-terminal solar cells; 4-terminal solar cells; CVD; ECR; amorphous Si-Si solar cell; electron cyclotron resonance; optimum design parameters; plasma chemical vapor deposition; tandem-type solar cells; thermal diffusion process; Cyclotrons; Design for experiments; Electrons; Heterojunctions; Indium tin oxide; PIN photodiodes; Photovoltaic cells; Resonance; Silicon carbide; Solar radiation;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111844
