Title :
Electromigration in Titanium Doped Aluminum Alloys
Author :
Towner, Janet M. ; Dirks, Albertus C. ; Tien, Tien
Author_Institution :
Philips Research Laboratories Sunnyvale, Signetics Corporation, Sunnyvale, California 94088
Abstract :
Homogeneous films of titanium-doped aluminum and aluminum-1% silicon were evaluated for possible application as interconnects in integrated circuits. Titanium concentration was systemnatically varied in the range of 0 to 1.2 wt.%. Electromigration behavior was studied for each film composition as a function of temperature. Significant differences were found between the binary and ternary alloys, corresponding to differences in the film microstructure.
Keywords :
Aluminum alloys; Circuit testing; Conducting materials; Copper; Electromigration; Integrated circuit interconnections; Plasma temperature; Sputter etching; Titanium; Wet etching;
Conference_Titel :
Reliability Physics Symposium, 1986. 24th Annual
Conference_Location :
Anaheim, CA, USA
DOI :
10.1109/IRPS.1986.362104
