• DocumentCode
    2614512
  • Title

    Suppression of Stress Induced Aluminum Void Formation

  • Author

    Koyama, H. ; Mashiko, Y. ; Nishioka, T.

  • Author_Institution
    LSI R&D Laboratory, Mitsubishi Electric Co., 4-1 Mizuhara Itami Hyogo, 664 Japan
  • fYear
    1986
  • fDate
    31503
  • Firstpage
    24
  • Lastpage
    29
  • Abstract
    It is found that aluminum void formation can be suppressed by mercury light irradiation of plasma enhanced chemical vapor deposition silicon nitride filmn coatings. Light beam induced stress relaxation of the SiN film is responsible for the suppression. We believe that presence of hydrogen in the aluminum lattice would create micro voids which aggregate into aluminum voids by the applied stress of the silicon nitride film.
  • Keywords
    Aggregates; Aluminum; Chemical vapor deposition; Coatings; Hydrogen; Lattices; Plasma chemistry; Semiconductor films; Silicon compounds; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1986. 24th Annual
  • Conference_Location
    Anaheim, CA, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1986.362107
  • Filename
    4208637
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2614512