DocumentCode :
2614572
Title :
The Effect of Long-Term Stress on Filler-Induced Failure in High Density RAMs
Author :
Miyamoto, Kazutoshi ; Nakagawa, Osamu ; Mitsuhashi, Junichi ; Matsumoto, Heihachi
Author_Institution :
Mitsubishi Electric Corporation, 4-1, Mizuhara, Itami, 664, Japan
fYear :
1986
fDate :
31503
Firstpage :
51
Lastpage :
54
Abstract :
The effect of long-term high temperature stress on the filler-induced failure in high density MOS RAMs was investigated. High temperature storage causes volume reduction in some plastic resins which enhances the local strong stress to RAM chip resulting in the filler-induced failure. This phenonenon is well explained by the increase of leakage current in p-n junction under local strong stress.
Keywords :
Ceramics; Circuit testing; DRAM chips; Internal stresses; P-n junctions; Packaging; Plastics; Resins; Temperature; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1986. 24th Annual
Conference_Location :
Anaheim, CA, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1986.362111
Filename :
4208641
Link To Document :
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