• DocumentCode
    2614572
  • Title

    The Effect of Long-Term Stress on Filler-Induced Failure in High Density RAMs

  • Author

    Miyamoto, Kazutoshi ; Nakagawa, Osamu ; Mitsuhashi, Junichi ; Matsumoto, Heihachi

  • Author_Institution
    Mitsubishi Electric Corporation, 4-1, Mizuhara, Itami, 664, Japan
  • fYear
    1986
  • fDate
    31503
  • Firstpage
    51
  • Lastpage
    54
  • Abstract
    The effect of long-term high temperature stress on the filler-induced failure in high density MOS RAMs was investigated. High temperature storage causes volume reduction in some plastic resins which enhances the local strong stress to RAM chip resulting in the filler-induced failure. This phenonenon is well explained by the increase of leakage current in p-n junction under local strong stress.
  • Keywords
    Ceramics; Circuit testing; DRAM chips; Internal stresses; P-n junctions; Packaging; Plastics; Resins; Temperature; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1986. 24th Annual
  • Conference_Location
    Anaheim, CA, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1986.362111
  • Filename
    4208641
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2614572