Title :
A Bond Failure Mechanism
Author :
Koch, Tim ; Richliug, Wayne ; Whitlock, John ; Hall, Dave
Author_Institution :
Hewlett-Packard - Northwiest Integrated Circuit Division, 1020 N.E. Cirle Blvd. Corvallis, Oregon 97330. (503) 757-2000
Abstract :
Intermittent continuity failures of P-DIP parts were found to be the result of wire bond failures induced by stresses associated with the assembly process. The bond failures were characterized by cracking of the underlying pad structure. It was found that silicon nodule precipitates from the aluminum metallization in the pad acted as points of high stress during the bonding of gold to the pad regions. By altering the bonding parameters and the underlying pad structure, failure of the bonds could be prevented.
Keywords :
Aluminum; Bonding forces; Failure analysis; Gold; Metallization; Packaging; Silicon; Stress; Substrates; Wire;
Conference_Titel :
Reliability Physics Symposium, 1986. 24th Annual
Conference_Location :
Anaheim, CA, USA
DOI :
10.1109/IRPS.1986.362112
