• DocumentCode
    2614626
  • Title

    A Layer Damage Model for Calculating Thermal Fatigue Lifetime of Power Devices

  • Author

    Guang-bo, Gao ; An, Chen ; Xiang, Gui

  • Author_Institution
    Reliability Physics Laboratory, Department of Radio-Electronics, Beijing Polytechnic University, Beijing, PRC
  • fYear
    1986
  • fDate
    31503
  • Firstpage
    79
  • Lastpage
    86
  • Abstract
    Based on the experimental data during device power cycling, the mechanical behavior of solder material, and by introducing a new concept "layer damage factor ß", the authors have proposed a layer damage model for calculating thermal fatique lifetime of power devices. The model can be used in estimating fatique lifetime, evaluating soldering quality, obtaining accelerated lifetime plot, designing chip backside metallizations, etc. Experimental results have been shown to support the theory.
  • Keywords
    Failure analysis; Fatigue; Life estimation; Lifetime estimation; Resistance heating; Semiconductor materials; Temperature; Thermal factors; Thermal resistance; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1986. 24th Annual
  • Conference_Location
    Anaheim, CA, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1986.362114
  • Filename
    4208645