DocumentCode
2614626
Title
A Layer Damage Model for Calculating Thermal Fatigue Lifetime of Power Devices
Author
Guang-bo, Gao ; An, Chen ; Xiang, Gui
Author_Institution
Reliability Physics Laboratory, Department of Radio-Electronics, Beijing Polytechnic University, Beijing, PRC
fYear
1986
fDate
31503
Firstpage
79
Lastpage
86
Abstract
Based on the experimental data during device power cycling, the mechanical behavior of solder material, and by introducing a new concept "layer damage factor Ã", the authors have proposed a layer damage model for calculating thermal fatique lifetime of power devices. The model can be used in estimating fatique lifetime, evaluating soldering quality, obtaining accelerated lifetime plot, designing chip backside metallizations, etc. Experimental results have been shown to support the theory.
Keywords
Failure analysis; Fatigue; Life estimation; Lifetime estimation; Resistance heating; Semiconductor materials; Temperature; Thermal factors; Thermal resistance; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1986. 24th Annual
Conference_Location
Anaheim, CA, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1986.362114
Filename
4208645
Link To Document