Localization of Defects in Gate Oxides by Means of Tunneling Current Microscopy

With the Tunneling Current Microscopy (TCM) we could localize defects in gate oxides without destroying the thin oxide. The method was tested with different test structures and the results were compared with those of dielectrical breakdown measurements. Thus we received additional information about the lateral distribution of defects which were not available by the commonly used destructive breakdown measurements.