DocumentCode
2614665
Title
Instabilities in a-Si-H solar cells: materials and device issues
Author
Wronski, Christopher R.
Author_Institution
Dept. of Electr. Eng. & Eng. Sci., Pennsylvania State Univ., University Park, PA, USA
fYear
1990
fDate
21-25 May 1990
Firstpage
1487
Abstract
The author reviews the significant advances made in the understanding of the Staebler-Wronski effect in a-Si:H-based materials, and its contributions to the light-induced changes in solar cells. Several unresolved issues related to the nature and origin of light-induced defects in materials and their effect on the long-term stability of a-Si:H-based solar cells are also reviewed, and an approach taken to address these problems is discussed
Keywords
Staebler-Wronski effect; amorphous semiconductors; elemental semiconductors; hydrogen; silicon; solar cells; Staebler-Wronski effect; amorphous Si:H solar cells; light-induced changes; long-term stability; Absorption; Amorphous materials; Conducting materials; Conductivity measurement; Electron optics; Metastasis; Optical sensors; Particle beam optics; Photovoltaic cells; Stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location
Kissimmee, FL
Type
conf
DOI
10.1109/PVSC.1990.111856
Filename
111856
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