Title :
1.00 MeV proton radiation resistance studies of single-junction and single dual-junction amorphous-silicon alloy solar cells
Author :
Abdulaziz, Salman ; Payson, J. Scott ; Li, Yang ; Woodyard, James R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wayne State Univ., Detroit, MI, USA
Abstract :
A comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00 MeV protons with fluences of 1.0×1014, 5.0×1014 and 1.0×10 15 cm-2 and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0×1015 cm-2 . The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current. while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum: the bottom junction degrades first in dual-junction cells
Keywords :
Ge-Si alloys; amorphous semiconductors; elemental semiconductors; hydrogen; proton effects; short-circuit currents; silicon; solar cells; I-V measurement; amorphous Si:H; amorphous SiGe:H; dual-junction solar cells; open-circuit voltage; proton radiation resistance; quantum efficiency measurements; short-circuit current; single junction solar cells; Absorption; Amorphous silicon; Annealing; Dark current; Degradation; Electric resistance; Electrical resistance measurement; Optical films; Photovoltaic cells; Protons;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111860
