Modeling of a reflection MQW modulator with multiple pass bands

Author

Xu, M.G. ; Siliquini, J.F. ; Dell, J.M.

Author_Institution

Dept. of Electr. & Electron. Eng., Western Australia Univ., Nedlands, WA, Australia

fYear

1996

fDate

8-11 Dec 1996

Firstpage

99

Lastpage

102

Abstract

We propose and investigate a modulator structure which acts as a conventional reflection modulator at one wavelength and allows several closely separated wavelengths to be transmitted unchanged. Modeling shows that this type of modulator can be designed with larger than 20 dB contrast ratio and lower than 2.5 dB insertion loss for the reflection wavelength, while having near unity transmission for the transmission wavelengths. The position of transmission peaks can be fully customized

Keywords

III-V semiconductors; aluminium compounds; electro-optical modulation; electro-optical switches; electroreflectance; gallium arsenide; semiconductor device models; semiconductor quantum wells; 2.5 dB; 820 to 865 nm; AlGaAs/GaAs; GaAs-Al_0.3Ga_0.7As; asymmetric Fabry-Perot reflection modulator; broadband optical switches; contrast ratio; insertion loss; modeling; multiple pass bands; reflection MQW modulator; reflection wavelength; transmission peaks; transmission wavelengths; Absorption; Insertion loss; Optical reflection; Photodetectors; Potential well; Propagation losses; Quantum well devices; Reflectivity; Stark effect; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610082

Filename

610082