• DocumentCode
    2614821
  • Title

    On the scaling limits of low-frequency noise in SiGe HBTs

  • Author

    Johansen, J. ; Jin, Z. ; Cressler, J.D. ; Cui, Y. ; Niu, G. ; Liang, Q. ; Rieh, J.-S. ; Freeman, G. ; Ahlgren, D. ; Joseph, A.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    12
  • Lastpage
    13
  • Abstract
    In this paper, we present for the first time LFN results on SiGe HBTs with fT´s of 210 GHz and 350 GHz, compare geometrical scaling-induced small-size effects in 1/f noise with previous SiGe technology generations, and use 2D robust simulation of 1/f noise to better understand the limitations of noise in SiGe HBTs.
  • Keywords
    1/f noise; Ge-Si alloys; heterojunction bipolar transistors; semiconductor device noise; semiconductor materials; semiconductor process modelling; 1/f noise; 210 GHz; 2D robust simulation; 350 GHz; LFN; SiGe; SiGe HBT; geometrical scaling-induced small-size effects; low-frequency noise; Circuit noise; Geometry; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Low-frequency noise; Noise generators; Noise measurement; Phase noise; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1271972
  • Filename
    1271972
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2614821