Title :
On the scaling limits of low-frequency noise in SiGe HBTs
Author :
Johansen, J. ; Jin, Z. ; Cressler, J.D. ; Cui, Y. ; Niu, G. ; Liang, Q. ; Rieh, J.-S. ; Freeman, G. ; Ahlgren, D. ; Joseph, A.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
In this paper, we present for the first time LFN results on SiGe HBTs with fT´s of 210 GHz and 350 GHz, compare geometrical scaling-induced small-size effects in 1/f noise with previous SiGe technology generations, and use 2D robust simulation of 1/f noise to better understand the limitations of noise in SiGe HBTs.
Keywords :
1/f noise; Ge-Si alloys; heterojunction bipolar transistors; semiconductor device noise; semiconductor materials; semiconductor process modelling; 1/f noise; 210 GHz; 2D robust simulation; 350 GHz; LFN; SiGe; SiGe HBT; geometrical scaling-induced small-size effects; low-frequency noise; Circuit noise; Geometry; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Low-frequency noise; Noise generators; Noise measurement; Phase noise; Silicon germanium;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1271972
