DocumentCode
2614858
Title
Radial Dependency of Reliability Defects on Silicon Wafers
Author
Bonges, Henry A., III
Author_Institution
IBM General Technology Division, Essex Junction, VT 05452
fYear
1986
fDate
31503
Firstpage
172
Lastpage
174
Abstract
A study analyzing reliability defects with respect to their original wafer location has recently been completed at IBM Burlington. The results of this study, which showed such defects to have a high radial dependency, are discussed herein. Equally important to these results is the process by which the results were obtained, a process termed Laser Chip ID. This process of permanently identifying chips by using a laser was found to be extremely useful and is also discussed in this paper.
Keywords
Hardware; Laser modes; Metallization; Semiconductor device manufacture; Semiconductor device reliability; Semiconductor devices; Semiconductor lasers; Silicon; Testing; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1986. 24th Annual
Conference_Location
Anaheim, CA, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1986.362129
Filename
4208660
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