• DocumentCode
    2614868
  • Title

    Buried oxide thickness effect and lateral scaling of SiGe HBT on SOI substrate

  • Author

    Chang, S.T. ; Liu, Y.H. ; Liu, C.W.

  • Author_Institution
    Electron. Res. & Service Organ., ITRI, Hsinchu, Taiwan
  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    16
  • Lastpage
    17
  • Abstract
    The SiGe HBTs On SOI substrates have a higher Early voltage, maximum oscillation frequency, and breakdown voltage. Buried oxide (BOX) thickness effect and lateral distance between collector and reach-through region of SiGe HBT on SOI substrates are investigated. A SiGe HBTs on SOI substrates with larger buried oxide thickness can achieve a higher BVCEO and fmax with a comparable fT and VA. Optimal design of the BOX thickness and Lco1 for SiGe HBTs on SOI has been studied.
  • Keywords
    Ge-Si alloys; buried layers; heterojunction bipolar transistors; semiconductor device breakdown; semiconductor materials; Early voltage; SOI substrate; Si; SiGe; SiGe HBT; breakdown voltage; buried oxide thickness effect; optimal design; oscillation frequency; Breakdown voltage; Capacitance; Carbon capture and storage; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Power engineering and energy; Radio frequency; SPICE; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1271974
  • Filename
    1271974
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2614868