DocumentCode :
2614868
Title :
Buried oxide thickness effect and lateral scaling of SiGe HBT on SOI substrate
Author :
Chang, S.T. ; Liu, Y.H. ; Liu, C.W.
Author_Institution :
Electron. Res. & Service Organ., ITRI, Hsinchu, Taiwan
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
16
Lastpage :
17
Abstract :
The SiGe HBTs On SOI substrates have a higher Early voltage, maximum oscillation frequency, and breakdown voltage. Buried oxide (BOX) thickness effect and lateral distance between collector and reach-through region of SiGe HBT on SOI substrates are investigated. A SiGe HBTs on SOI substrates with larger buried oxide thickness can achieve a higher BVCEO and fmax with a comparable fT and VA. Optimal design of the BOX thickness and Lco1 for SiGe HBTs on SOI has been studied.
Keywords :
Ge-Si alloys; buried layers; heterojunction bipolar transistors; semiconductor device breakdown; semiconductor materials; Early voltage; SOI substrate; Si; SiGe; SiGe HBT; breakdown voltage; buried oxide thickness effect; optimal design; oscillation frequency; Breakdown voltage; Capacitance; Carbon capture and storage; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Power engineering and energy; Radio frequency; SPICE; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1271974
Filename :
1271974
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2614868
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