Si/SiGe terahertz quantum cascade emitters

Author

Paul, D.J. ; Lynch, S.A. ; Townsend, P. ; Ikonic, Zoran ; Kelsall, R.W. ; Harrison, P. ; Liew, S.L. ; Norris, D.J. ; Cullis, A.G. ; Zhang, J. ; Gamble, H.S. ; Tribe, W.R. ; Arnone, D.D.

Author_Institution

Cavendish Lab., Cambridge Univ., UK

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

20

Lastpage

21

Abstract

In this paper, we demonstrated electroluminescence in strain-symmetrised structures with up to 600 active periods. The wafer also demonstrates for the first time growth of a strain symmetrised Si/SiGe superlattice on top of a silicon-on-silicide wafer where the silicide is designed to be a bottom reflector in waveguide cavity. TEM images of the structure demonstrated excellent planarity and uniformity of the active periods.

Keywords

Ge-Si alloys; electroluminescence; elemental semiconductors; quantum cascade lasers; semiconductor superlattices; silicon; submillimetre wave lasers; transmission electron microscopy; waveguide lasers; Si-SiGe; Si/SiGe terahertz quantum cascade emitters; TEM; bottom reflector; electroluminescence; silicon-on-silicide wafer; strain symmetrised Si/SiGe superlattice; wave guide cavity; Electroluminescence; Frequency; Germanium silicon alloys; Page description languages; Polarization; Quantum cascade lasers; Silicon germanium; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1271976

Filename

1271976