Title :
Hot Electron Induced Retention Time Degradation in MOS Dynamic RAMs
Author :
Cahoon, E.C. ; Thornewell, K. ; Tsai, P. ; Gukelberger, T. ; Sylvestri, J. ; Orro, J.
Author_Institution :
Component Vendor Assurance, IBM, P. O. Box 390, Poughkeepsie, N.Y. 12602
Abstract :
Hot electron induced MOSFET instabilities have been found to significantly degrade the retention time of dynamic RAMs. Failure is due to the effect of increased subthreshold leakage on balanced sense nodes. Plasma nitride passivations greatly increase the degradation rate. The complex synergism between device degradation and DRAM parametric shift demonstrates the necessity of accelerated stress of functional modules.
Keywords :
Acceleration; DRAM chips; Degradation; Electrons; MOSFET circuits; Passivation; Plasma accelerators; Plasma devices; Random access memory; Subthreshold current;
Conference_Titel :
Reliability Physics Symposium, 1986. 24th Annual
Conference_Location :
Anaheim, CA, USA
DOI :
10.1109/IRPS.1986.362133
