Title :
Electronic structure of high-k gate dielectrics - applications to tunneling
Author :
Lucovsky, Gerald
Author_Institution :
Dept. of Phys., North Carolina State Univ., Raleigh, NC, USA
Abstract :
In this paper we investigate the conduction band states of ZrO2 by XAS and VUV SE measurements associated with Zr 4d* states. From these transitions it is found that band edge optical absorption constant α as a function of photon energy obtained from analysis of VUV SE data.
Keywords :
X-ray absorption spectra; ab initio calculations; absorption coefficients; conduction bands; dielectric materials; ellipsometry; tunnelling; ultraviolet spectra; zirconium compounds; XAS; ZrO2; band edge optical absorption constant; conduction band; electronic structure; high-k gate dielectrics; photon energy; tunneling; vacuum UV spectroscopic ellipsometry; vacuum ultraviolet spectroscopic ellipsometry; Dielectric devices; Displays; Earth; Electrochemical impedance spectroscopy; Hafnium; High-K gate dielectrics; Physics; Silicon alloys; Tunneling; Zirconium;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1271979
