DocumentCode
2614978
Title
Reliability of Trench Capacitors for VLSI Memories
Author
Baglee, D.A. ; Beydler, C. ; Shih, P. ; Yashiro, M.
Author_Institution
Advanced Development-Semiconductor Group, Texas Instruments Inc., P.O. Box 1443, Houston, Texas 77001
fYear
1986
fDate
31503
Firstpage
215
Lastpage
219
Abstract
Trench capacitors will be used in high density memories, such as the 1Mbit or 4Mbit DRAM, in order to minimize the size of the chip. In this paper the properties and reliability of trench capacitors are discussed. We show that the leakage and break-down characteristics are dominated by the trench profile. Accelerated wearout shows that trench capacitors are suitable for 5V operation, and that alpha particle induced soft error rates are similar to, or better than, conventional planar devices.
Keywords
Capacitors; Dielectrics; Electric breakdown; Error analysis; Etching; Fabrication; Instruments; Random access memory; Silicon; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1986. 24th Annual
Conference_Location
Anaheim, CA, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1986.362136
Filename
4208667
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