Title :
Fabrication, performance and modelling of high-speed GaAs MSM photodetectors
Author :
Winnall, S.T. ; Kachwalla, Z.
Author_Institution :
Electronic Warfare Div., Defence Sci. & Technol. Organ., Salisbury, SA, Australia
Abstract :
Short distance microwave and millimetre-wave fibre-optic links require high-speed photodetectors. Gallium Arsenide (GaAs) Metal-Semiconductor-Metal (MSM) photodetectors are not only capable of operating at frequencies of tens of GHz but also are intended for future planar integration with GaAs based Monolithic Microwave Integrated Circuits (MMICs). This paper presents results on MSM photodetectors of different geometries that were fabricated using optical lithography. They were tested and compared to an equivalent circuit to study the effect of device geometry on bandwidth and responsivity. The devices were measured to have a typical bandwidth of 9 GHz
Keywords :
III-V semiconductors; S-parameters; equivalent circuits; gallium arsenide; high-speed optical techniques; impedance matching; metal-semiconductor-metal structures; microwave links; optical fibre communication; photodetectors; photolithography; semiconductor device models; semiconductor device testing; semiconductor technology; 9 GHz; DC I-V characteristics; GaAs; MMIC planar integration; S-parameter; bandwidth; device geometry; equivalent circuit; fabrication; frequency domain measurements; high-speed GaAs MSM photodetectors; impedance matching networks; microwave fibre-optic links; microwave performance; millimetre-wave fibre-optic links; modelling; optical lithography; responsivity; testing; Bandwidth; Circuit testing; Fabrication; Frequency; Gallium arsenide; Geometrical optics; MMICs; Microwave devices; Microwave integrated circuits; Photodetectors;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610083
