High gain V-band heterojunction FET MMIC power amplifiers

Author

Funabashi, M. ; Hosoya, K. ; Ohata, K. ; Onda, K. ; Iwata, N. ; Kuzuhara, M.

Author_Institution

Advanced Millimeter Wave Technologies Co., Ltd., Shiga, Japan

fYear

1993

fDate

10-13 Oct. 1993

Firstpage

379

Lastpage

382

Abstract

High gain V-band medium power MMIC amplifiers have been successfully demonstrated using 0.15 /spl mu/m T-shaped gate AlGaAs/InGaAs heterojunction FETs. Optimization of the FET achieved high f/sub max/ of 227 GHz with high gate breakdown voltage of -13 V. A single-stage 65 GHz-band amplifier has exhibited 8.7 dB small signal gain with the 1 dB-gain-down bandwidth of 2 GHz. A single-stage 60 GHz-band amplifier has achieved 8.4 dB gain with 3 GHz bandwidth and good input and output impedance matching. The output power of 37.2 mW with high power-added-efficiency of 25.6% at 61.2 GHz has been obtained at 3 V drain bias.<>

Keywords

III-V semiconductors; JFET integrated circuits; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; millimetre wave amplifiers; power amplifiers; -13 V; 2 GHz; 227 GHz; 25.6 percent; 3 GHz; 3 V; 37.2 mW; 60 GHz; 61.2 GHz; 65 GHz; 8.4 dB; 8.7 dB; AlGaAs-InGaAs; III-V semiconductor; MIMIC; MMIC power amplifiers; T-shaped gate; V-band; heterojunction FET; high gain; high gate breakdown voltage; high power-added-efficiency; impedance matching; medium power; single-stage; small signal gain; Bandwidth; FETs; Field effect MMICs; Gain; Heterojunctions; High power amplifiers; Impedance matching; Indium gallium arsenide; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1393-3

Type

conf

DOI

10.1109/GAAS.1993.394429

Filename

394429