a-(Si,Ge):H alloys: status and issues

Author

Stafford, B.L. ; Dalal, Vikram L. ; Baron, B.N. ; Silver, M.

Author_Institution

Solar Energy Res. Inst., Golden, CO, USA

fYear

1990

fDate

21-25 May 1990

Firstpage

1619

Abstract

The authors report the findings of a workshop devoted to assessing the technical status of and identifying critical issues for future research on a-(Si,Ge):H alloy materials and devices. The workshop was attended by 28 participants representing industry, academic, and government laboratories. The technical status of a-(Si,Ge):H materials included electron and hole mobility-lifetime products, Urbach energies for conduction and valence band tails, hydrogen bonding, and midgap density-of-states. Critical needs that were identified included fabrication, analysis, and modeling of devices, reproducible and well-characterized deposition, and more complete structural, optical, and electrical characterization of device-quality materials

Keywords

Ge-Si alloys; amorphous semiconductors; carrier lifetime; carrier mobility; hydrogen; solar cells; Urbach energies; amorphous SiGe:H solar cells; conduction band tails; deposition; electrical characteristics; electron mobility-lifetime products; fabrication; hole mobility-lifetime products; midgap density-of-states; modeling; optical characteristics; semiconductor; structural characteristics; valence band tails; Bonding; Charge carrier processes; Conducting materials; Electron mobility; Electron optics; Government; Hydrogen; Optical device fabrication; Optical materials; Tail;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE

Conference_Location

Kissimmee, FL

Type

conf

DOI

10.1109/PVSC.1990.111883

Filename

111883