A 8-15 GHz, 1W HBT power MMIC with 16 dB gain and 48% peak power added efficiency

Author

Ali, F. ; Salib, M. ; Gupta, A. ; Dawson, D.

Author_Institution

Westinghouse Electric Corp., Baltimore, MD, USA

fYear

1993

fDate

10-13 Oct. 1993

Firstpage

363

Lastpage

366

Abstract

A two-stage X-Ku band MMIC power amplifier has been designed and fabricated using common-emitter GaAs heterojunction bipolar transistors (HBTs). This monolithic amplifier has achieved 16 dB gain, 1.4 W (CW) peak output power and 48% peak power added efficiency (PAE) over 8-15 GHz. Input and output matching networks, as well as biasing circuits, are all contained within this HBT MMIC. To the authors´ knowledge, this is the highest efficiency and the highest gain reported for any broadband monolithic power amplifier in the X-Ku band.<>

Keywords

III-V semiconductors; MMIC power amplifiers; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; microwave power amplifiers; wideband amplifiers; 1.4 W; 16 dB; 48 percent; 8 to 15 GHz; AlGaAs-GaAs; GaAs; HBT power MMIC; III-V semiconductor; MMIC power amplifier; X-Ku band; biasing circuits; broadband; matching networks; peak output power; peak power added efficiency; two-stage; Broadband amplifiers; Circuits; Gain; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Impedance matching; MMICs; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1393-3

Type

conf

DOI

10.1109/GAAS.1993.394433

Filename

394433