DocumentCode :
2615275
Title :
Composition, chemical structure and electronic band structure of rare earth oxide/Si(100) interfacial transition layer
Author :
Shankar Subramanian, R.
Author_Institution :
Nat. Acoust. Labs., Chatswood, NSW, Australia
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
64
Lastpage :
65
Abstract :
In this report, we present the composition, chemical structure and electronic band structure of three kinds of ultrathin rare earth oxide (La2O3, Gd2O3, Lu2O3) films formed on Si(100).
Keywords :
chemical analysis; chemical structure; conduction bands; dielectric materials; dielectric thin films; elemental semiconductors; gadolinium compounds; interface states; lanthanum compounds; lutetium compounds; silicon; valence bands; Gd2O3 film; Gd2O3-Si; La2O3 film; La2O3-Si; Lu2O3 film; Lu2O3-Si; chemical composition; chemical structure; electronic band structure; rare earth oxide-Si(100) interfacial transition layer; ultrathin rare earth oxide; Atomic layer deposition; Backscatter; Bonding; Chemicals; Electrochemical impedance spectroscopy; Photonic band gap; Semiconductor films; Solids; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1271997
Filename :
1271997
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2615275
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