C-band 20 watt internally matched GaAs based pseudomorphic HEMT power amplifiers

Author

Fu, S.T. ; Komiak, J.J. ; Lester, L.F. ; Duh, K.H.G. ; Smith, P.M. ; Chao, P.C. ; Yu, T.H.

Author_Institution

Martin Marietta Electron. Lab., Syracuse, NY, USA

fYear

1993

fDate

10-13 Oct. 1993

Firstpage

355

Lastpage

358

Abstract

The authors present preliminary results of the effort to develop C-band high power internally-matched GaAs-based pseudomorphic high electron mobility transistors (PHEMTs) power amplifiers. Previously developed 0.25 /spl mu/m/spl times/8 mm PHEMT chips had been selected as the building block of the power amplifiers. The single chip units are comprised of one 8 mm PHEMT chip and its input and output matching circuits. These parts are integrated into a small copper carrier. By combining four 8 mm chips with lumped elements and a distributed Wilkinson power divider/combiner, the units were assembled within the same type of carrier and delivered 20 W output power.<>

Keywords

HEMT integrated circuits; III-V semiconductors; gallium arsenide; microwave field effect transistors; microwave integrated circuits; microwave power amplifiers; microwave power transistors; power HEMT; power field effect transistors; 20 W; 4 GHz; C-band; GaAs based; III-V semiconductor; distributed Wilkinson power divider/combiner; high power; hybrid amplifier; internally matched; pseudomorphic HEMT power amplifiers; single chip units; Circuits; Copper; Electron mobility; Gallium arsenide; HEMTs; High power amplifiers; Impedance matching; MODFETs; PHEMTs; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1393-3

Type

conf

DOI

10.1109/GAAS.1993.394435

Filename

394435