Title :
Large periphery, high power pseudomorphic HEMTs
Author :
Aucoin, L. ; Bouthilette, S. ; Platzker, A. ; Shanfield, S. ; Bertrand, A. ; Hoke, W. ; Lyman, P.
Author_Institution :
Raytheon Res. Div., Lexington, MA, USA
Abstract :
The authors have simultaneously demonstrated 10 W output power, 13.5 dB gain and 63% power-added efficiency on a single 16.8 mm pseudomorphic high electron mobility transistor (PHEMT) device at 2.45 GHz. This result represents the highest output power from a single transistor at S-band frequencies. The power density exhibited by the PHEMT device was 625 mW/mm which is significantly higher than a typical MESFET power density of 400 mW/mm.<>
Keywords :
III-V semiconductors; UHF field effect transistors; gallium arsenide; microwave field effect transistors; microwave power transistors; power HEMT; power field effect transistors; 10 W; 13.5 dB; 2.45 GHz; 63 percent; GaAs; III-V semiconductor; S-band; high power pseudomorphic HEMT; large periphery; power performance; power-added efficiency; Connectors; Etching; Fingers; Gallium arsenide; HEMTs; MESFETs; Ohmic contacts; PHEMTs; Power generation; Surface resistance;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1393-3
DOI :
10.1109/GAAS.1993.394436
