DocumentCode :
2615317
Title :
The effects of nitrogen in HfO2 for improved MOSFET performance
Author :
Cho, H. -I ; Kang, C.Y. ; Kang, C.S. ; Choi, R. ; Kim, Y.H. ; Akbar, M.S. ; Choi, C.H. ; Rhee, S.J. ; Lee, J.C.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
68
Lastpage :
69
Abstract :
In this study, HfSiON was applied as a top layer of HfO2 to achieve higher mobility. The effects of nitrogen and its profile on MOSFET performance of high-k devices are investigated.
Keywords :
MOSFET; chemical interdiffusion; dielectric devices; dielectric materials; dielectric thin films; electron mobility; hafnium compounds; impurity distribution; silicon compounds; HfO2 layer; HfSiON-HfO2; MOSFET; high-k devices; nitrogen effect; Capacitance; Charge pumps; Dielectrics and electrical insulation; Hafnium oxide; Impurities; MOSFET circuits; Nitrogen; Thermal stability; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1271999
Filename :
1271999
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2615317
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