Luminescence of Pr and Tm ions implanted into AlN thin films

Author

Jadwisienczak, W.M. ; Ozykowski, H.J. ; Bensaoula, A. ; Monteiro, O.

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Ohio Univ., Athens, OH, USA

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

74

Abstract

In this presentation, we report on the cathodoluminescence and photoluminescence (PL) properties of Pr and Tm ions implanted into AlN films grown by plasma source molecular beam epitaxy. To optically activate incorporated impurities and remove ion implantation-induced damages, the RE-implanted AlN samples were given isochronal thermal annealing treatments at a temperature of 1050 °C in NH₃.

Keywords

III-V semiconductors; aluminium compounds; annealing; cathodoluminescence; impurities; ion implantation; photoluminescence; praseodymium; semiconductor epitaxial layers; thulium; wide band gap semiconductors; 1050 degC; AlN:Pr; AlN:Tm; Pr ion implanted AlN thin films; Tm ion implanted AlN thin films; cathodoluminescence; isochronal thermal annealing; photoluminescence; plasma source molecular beam epitaxy; rare earth implanted AlN sample; Annealing; Impurities; Luminescence; Molecular beam epitaxial growth; Optical films; Particle beam optics; Photoluminescence; Plasma properties; Plasma sources; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272000

Filename

1272000