Title :
Luminescence of Pr and Tm ions implanted into AlN thin films
Author :
Jadwisienczak, W.M. ; Ozykowski, H.J. ; Bensaoula, A. ; Monteiro, O.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Ohio Univ., Athens, OH, USA
Abstract :
In this presentation, we report on the cathodoluminescence and photoluminescence (PL) properties of Pr and Tm ions implanted into AlN films grown by plasma source molecular beam epitaxy. To optically activate incorporated impurities and remove ion implantation-induced damages, the RE-implanted AlN samples were given isochronal thermal annealing treatments at a temperature of 1050 °C in NH3.
Keywords :
III-V semiconductors; aluminium compounds; annealing; cathodoluminescence; impurities; ion implantation; photoluminescence; praseodymium; semiconductor epitaxial layers; thulium; wide band gap semiconductors; 1050 degC; AlN:Pr; AlN:Tm; Pr ion implanted AlN thin films; Tm ion implanted AlN thin films; cathodoluminescence; isochronal thermal annealing; photoluminescence; plasma source molecular beam epitaxy; rare earth implanted AlN sample; Annealing; Impurities; Luminescence; Molecular beam epitaxial growth; Optical films; Particle beam optics; Photoluminescence; Plasma properties; Plasma sources; Transistors;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272000
