AlGaAs/GaAs HBTs with high f/sub max/ for high-speed optical modulator driver circuit

Author

Sakita, K. ; Endo, H. ; Ishii, K. ; Ohnishi, H. ; Yamashita, K. ; Ihara, T. ; Hamano, H. ; Fujii, T. ; Yokoyama, N.

Author_Institution

Fujitsu Lab. Ltd., Atsugi, Japan

fYear

1993

fDate

10-13 Oct. 1993

Firstpage

307

Lastpage

310

Abstract

AlGaAs/GaAs HBTs having an f/sub max/ of 120.9 GHz and a breakdown voltage over 10 V of BV/sub ceo/ suitable for a high-speed and large voltage swing driver circuit have been demonstrated. Using these HBTs, an optical external modulator driver circuit with 29 ps of t/sub /spl tau// and 25 ps of t/sub f/ which make it possible to operate at 10 Gb/s was realized.<>

Keywords

III-V semiconductors; aluminium compounds; application specific integrated circuits; bipolar MIMIC; decision circuits; differential amplifiers; driver circuits; gallium arsenide; heterojunction bipolar transistors; integrated optoelectronics; millimetre wave amplifiers; optical communication equipment; optical modulation; 10 Gbit/s; 120.9 GHz; AlGaAs-GaAs; HBT; III-V semiconductor; external modulator driver circuit; high maximum frequency; high-speed optical modulator; large voltage swing driver circuit; Capacitance; Driver circuits; Electrodes; Etching; Gallium arsenide; Heterojunction bipolar transistors; High speed optical techniques; Indium gallium arsenide; Optical modulation; Optical refraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1393-3

Type

conf

DOI

10.1109/GAAS.1993.394445

Filename

394445