Title :
Analytical model for the InP/InGaAs uni-travelling carrier photodiode
Author :
Srivastava, S. ; Roenker, K.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA
Abstract :
A one dimensional, drift-diffusion based, analytical model is reported which describes the operation and performance of the InP-based uni-traveling carrier photodiode (UTC-PD). The UTC-PD has been proposed as a replacement for the InGaAs PIN photodiode for long wavelength optical communications. In this work, the development of an analytical model is described for use in investigation of the device´s operation and the effects of the device structure on the operational performance of the device. The effects of a finite conduction band barrier at the collector end of the absorption layer on the photocurrent and onset of high injection effects is examined. Also included in the model is the leakage current due to a finite conduction band barrier at the blocking end of the absorption layer. The results are discussed in relation to reports of the device´s experimentally observed performance and numerical modeling results.
Keywords :
III-V semiconductors; conduction bands; gallium arsenide; indium compounds; leakage currents; optical communication equipment; p-i-n photodiodes; semiconductor device models; semiconductor epitaxial layers; InGaAs PIN photodiode; InP-InGaAs; InP/InGaAs unitravelling carrier photodiode; absorption layer; analytical model; drift-diffusion; finite conduction band barrier; injection effects; leakage current; numerical modeling; optical communications; photocurrent; semiconductor epitaxial layers; Absorption; Analytical models; Electron optics; Indium gallium arsenide; Indium phosphide; Optical devices; Optical receivers; PIN photodiodes; Photoconductivity; Semiconductor process modeling;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272009
