DocumentCode :
2615475
Title :
Novel technology of Er-doped glassy films fabrication for applications in optoelectronics
Author :
Kholodkov, A.V. ; Golant, K.M.
Author_Institution :
Gen. Phys. Inst., Acad. of Sci., Moscow, Russia
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
90
Lastpage :
91
Abstract :
Er3+ ions luminescence in silicate samples with Ge, Al, K, N, F additives is investigated. No fall in quantum yield of C-band luminescence in aluminium silicate and potassium silicate hosts is revealed up to ∼1020cm-3 Er3+ concentration.
Keywords :
additives; aluminosilicate glasses; erbium; fluoride glasses; germanate glasses; luminescence; nitrogen; plasma CVD; potassium; thin films; C-band luminescence; Er-doped glassy films; SiO2-Al:Er; SiO2-F:Er; SiO2-Ge:Er; SiO2-K:Er; SiO2-N:Er; additives; aluminium silicate; ions luminescence; optoelectronics applications; potassium silicate; Atomic layer deposition; Chemical technology; Erbium; Glass; Luminescence; Optical device fabrication; Optical surface waves; Plasma chemistry; Plasma temperature; Silicon compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1272010
Filename :
1272010
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2615475
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