Ion implantation for wavelength-shifting and quantum wire lasers

Author

Tan, H.H. ; Kim, Yong ; Jagadish, C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

1996

fDate

8-11 Dec 1996

Firstpage

114

Lastpage

117

Abstract

Ion implantation is used to induce intermixing in quantum well structures and hence modify the shape and the excitonic levels of the wells. Broad-area GaAs quantum well lasers lasing at different wavelengths have been fabricated using this technique. Up to 5 nm shift in the wavelength is observed corresponding to an implantation dose of 1×10¹⁵ H/cm² without any degradation in the current threshold characteristics. A self-aligned dual implantation method is proposed to create current confining regions and selectively disorder the side walls in quantum wire laser structures grown on non-planar substrates

Keywords

III-V semiconductors; gallium arsenide; gradient index optics; ion beam mixing; ion implantation; optical fabrication; quantum well lasers; rapid thermal annealing; semiconductor quantum wires; spectral line shift; GRINSCH structure; GaAs; GaAs quantum wire lasers; RTA; broad-area GaAs quantum well lasers; current confining regions; current threshold characteristics; excitonic levels; intermixing; ion implantation; nonplanar substrates; quantum well structures; selective side wall disorder; self-aligned dual implantation method; wavelength-shifting; Gallium arsenide; Ion implantation; Laser theory; Optical buffering; Optical devices; Optical materials; Quantum well lasers; Rapid thermal annealing; Substrates; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610085

Filename

610085