• DocumentCode
    2615501
  • Title

    Blue electroluminescence from MOS capacitors with Si-implanted SiO2

  • Author

    Matsuda, T. ; Kawabe, M. ; Nishihara, K. ; Iwata, H. ; Iwatsubo, S. ; Ohzone, T.

  • Author_Institution
    Dept. of Electron. & Inf., Toyama Prefectural Univ., Japan
  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    94
  • Lastpage
    95
  • Abstract
    In this work, we demonstrate blue electroluminescence (EL) from Au/SiO2/p-Si MOS capacitor with Si implanted SiO2. The transparent Au gate not only improves measurable wavelength range but also suppresses interference effects among MOS layers. The EL spectra have been successfully analysed by Gaussian distributions, and the EL mechanism is discussed. Gate current (JG) versus gate voltage (VG) characteristics under accumulation conditions was analysed. Blue EL spectra was observed and the measured data are successfully fitted by the Gaussian curves for EL mechanism analysis.
  • Keywords
    Gaussian distribution; MOS capacitors; electroluminescence; electroluminescent devices; elemental semiconductors; gold; silicon; silicon compounds; Au-SiO2-Si; EL mechanism analysis; Gaussian curves; Gaussian distributions; MOS capacitors; Si-implanted SiO2; SiO2:Si; blue EL spectra; blue electroluminescence; transparent Au gate; Displays; Electrodes; Electroluminescence; Gold; Large scale integration; MOS capacitors; Nonvolatile memory; Pressure measurement; Voltage; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1272012
  • Filename
    1272012
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2615501