DocumentCode :
2615501
Title :
Blue electroluminescence from MOS capacitors with Si-implanted SiO2
Author :
Matsuda, T. ; Kawabe, M. ; Nishihara, K. ; Iwata, H. ; Iwatsubo, S. ; Ohzone, T.
Author_Institution :
Dept. of Electron. & Inf., Toyama Prefectural Univ., Japan
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
94
Lastpage :
95
Abstract :
In this work, we demonstrate blue electroluminescence (EL) from Au/SiO2/p-Si MOS capacitor with Si implanted SiO2. The transparent Au gate not only improves measurable wavelength range but also suppresses interference effects among MOS layers. The EL spectra have been successfully analysed by Gaussian distributions, and the EL mechanism is discussed. Gate current (JG) versus gate voltage (VG) characteristics under accumulation conditions was analysed. Blue EL spectra was observed and the measured data are successfully fitted by the Gaussian curves for EL mechanism analysis.
Keywords :
Gaussian distribution; MOS capacitors; electroluminescence; electroluminescent devices; elemental semiconductors; gold; silicon; silicon compounds; Au-SiO2-Si; EL mechanism analysis; Gaussian curves; Gaussian distributions; MOS capacitors; Si-implanted SiO2; SiO2:Si; blue EL spectra; blue electroluminescence; transparent Au gate; Displays; Electrodes; Electroluminescence; Gold; Large scale integration; MOS capacitors; Nonvolatile memory; Pressure measurement; Voltage; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1272012
Filename :
1272012
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2615501
بازگشت