Effect of high Al-content AlGaN/GaN short period strained-layer superlattices on the threading dislocations in GaN films

Author

Huang, Cheng-Wei ; Tseng, Su-Fen ; Wang, Cheng-Liang ; Tsai, Yu-Li ; Liao, Wei-Tsai ; Gong, Jyh-Rong ; Lin, Wen-Jen ; Hu, Long-Jang ; Ya-Tung Cherng

Author_Institution

Dept. of Mater. Sci. & Eng., Feng Chia Univ., Taichung, Taiwan

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

100

Lastpage

101

Abstract

In this paper, we report the role played by AlGaN/GaN short period strained-layer superlattices (SPSLS) on the threading dislocation (TD) density reduction in GaN films. TD annihilation and de-multiplication processes were observed to account for the etching pit densities (EPD) reduction in GaN films involving AlGaN/GaN intermediate SPSLS structures. Transmission electron microscopy (TEM) was employed to characterize the microstructural properties of GaN films.

Keywords

III-V semiconductors; aluminium compounds; crystal microstructure; dislocation density; gallium compounds; semiconductor epitaxial layers; semiconductor superlattices; transmission electron microscopy; wide band gap semiconductors; Al-content AlGaN/GaN short period strained-layer superlattices; AlGaN-GaN; GaN films; TEM; etching pit density reduction; microstructural properties; threading dislocations; transmission electron microscopy; Aluminum gallium nitride; Artificial intelligence; Chemical technology; Diode lasers; Etching; Gallium nitride; Light emitting diodes; Materials science and technology; Optical materials; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2003 International

Print_ISBN

0-7803-8139-4

Type

conf

DOI

10.1109/ISDRS.2003.1272014

Filename

1272014