• DocumentCode
    2615595
  • Title

    Nitride-based HFETs with carrier confinement layers

  • Author

    Chang, S.J. ; Su, E.K. ; Kuan, T.M. ; Ko, C.H. ; Wei, S.C. ; Lan, W.H. ; Cherng, Y.T. ; Chen, S.C.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    104
  • Lastpage
    105
  • Abstract
    Nitride-based Al0.24Ga0.76N/GaN heterostructure field effect transistors (HFETs) with carrier confinement layers were fabricated. The results found that the enhanced 2 dimensional electron gas (2DEG) carrier mobility from 1070 to 1180 cm2V-1sec-1 by the insertion of a Mg-doped semi-insulating carrier confinement layer with a Cp2Mg flow rate of 2.36×10-8 mole/min and smoother sample surface. The DC and RF characteristics of these HFETs were also good.
  • Keywords
    III-V semiconductors; aluminium compounds; carrier mobility; field effect transistors; gallium compounds; magnesium; surface roughness; wide band gap semiconductors; AlGaN-GaN; Mg; Mg doped semiinsulating carrier confinement layers; carrier mobility; heterostructure field effect transistors; nitride based HFET; two dimensional electron gas; Carrier confinement; Electron mobility; Gallium nitride; HEMTs; MODFETs; Radio frequency; Research and development;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1272016
  • Filename
    1272016
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2615595