DocumentCode :
2615605
Title :
4 THz sidewall-etched varactors for sub-mm-wave sampling circuits
Author :
Allen, S.T. ; Bhattacharya, U. ; Rodwell, M.J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear :
1993
fDate :
10-13 Oct. 1993
Firstpage :
285
Lastpage :
287
Abstract :
Schottky varactor diodes with 4 THz cutoff frequencies were fabricated using 1 /spl mu/m lithography and self-aligned RIE sidewall etching. A novel microwave characterization technique was used to determine the diode cutoff frequency. Using these devices, subpicosecond pulse generators integrated with 515 GHz bandwidth sampling circuits were fabricated.<>
Keywords :
Schottky diodes; coplanar waveguides; frequency multipliers; pulse generators; signal sampling; sputter etching; submillimetre wave diodes; submillimetre wave integrated circuits; varactors; 4 THz; 425 GHz; 515 GHz; CPW; GaAs; III-V semiconductor; Schottky varactor diodes; cutoff frequencies; microwave characterization technique; nonlinear transmission lines; self-aligned RIE sidewall etching; sub-mm-wave sampling circuits; subpicosecond pulse generators; Circuits; Cutoff frequency; Etching; Lithography; Microwave devices; Microwave theory and techniques; Pulse generation; Sampling methods; Schottky diodes; Varactors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1393-3
Type :
conf
DOI :
10.1109/GAAS.1993.394450
Filename :
394450
Link To Document :
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