DocumentCode
2615612
Title
Surface properties of Si-doped GaN films
Author
Lin, T.Y. ; Su, W.S. ; Su, W.S. ; Chen, Y.F.
Author_Institution
Inst. of Optoelectron. Sci., Nat. Taiwan Ocean Univ., Keelung, Taiwan
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
106
Lastpage
107
Abstract
In this paper we report surface properties of Si-doped GaN films by electric force microscopy and its influence on photoluminescence spectra. The increased PL ratio of the UV luminescence is indicative of reduction in surface recombination velocity due to the changes of surface states.
Keywords
III-V semiconductors; gallium compounds; photoluminescence; semiconductor epitaxial layers; silicon; surface recombination; surface roughness; surface states; wide band gap semiconductors; GaN:Si; Si-doped GaN films; UV luminescence; electric force microscopy; photoluminescence spectra; surface properties; surface recombination; surface states; Doping; Electrostatics; Force measurement; Gallium nitride; Luminescence; Ocean temperature; Optical films; Optical microscopy; Sea surface; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272017
Filename
1272017
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