• DocumentCode
    2615659
  • Title

    Hybrid resistor/FET-logic demultiplexer architecture design for hybrid CMOS/nanodevice circuits

  • Author

    Li, Shu ; Zhang, Tong

  • Author_Institution
    Dept. of Electr., Rensselaer Polytech. Inst., Troy, NY
  • fYear
    2007
  • fDate
    7-10 Oct. 2007
  • Firstpage
    574
  • Lastpage
    579
  • Abstract
    Hybrid nanoelectronics are emerging as one viable option to sustain the Moorepsilas Law after the CMOS scaling limit is reached. One main design challenge in hybrid nanoelectronics is the interface (named as demux) between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in CMOS domain. The prior work on demux design use a single type of devices to realize the demultiplexing function, but hardly provides a satisfactory solution. This work proposes to combine resistor with FET to implement the demux, leading to the so-called hybrid resistor/FET-logic demux. Such hybrid demux architecture can make these two types of devices well complement each other to improve the overall demux design effectiveness. Furthermore, the effects of resistor conductance variability are analyzed and evaluated based on computer simulations.
  • Keywords
    CMOS integrated circuits; demultiplexing equipment; integrated circuit design; logic circuits; demux design; highly dense nanowires; hybrid CMOS/nanodevice circuits; hybrid nanoelectronics; hybrid resistor/FET-logic demultiplexer architecture design; nanodevice crossbars; Circuits; Computer architecture; Demultiplexing; Diodes; FETs; Moore´s Law; Nanoelectronics; Nanowires; Resistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer Design, 2007. ICCD 2007. 25th International Conference on
  • Conference_Location
    Lake Tahoe, CA
  • ISSN
    1063-6404
  • Print_ISBN
    978-1-4244-1257-0
  • Electronic_ISBN
    1063-6404
  • Type

    conf

  • DOI
    10.1109/ICCD.2007.4601955
  • Filename
    4601955