DocumentCode
2615659
Title
Hybrid resistor/FET-logic demultiplexer architecture design for hybrid CMOS/nanodevice circuits
Author
Li, Shu ; Zhang, Tong
Author_Institution
Dept. of Electr., Rensselaer Polytech. Inst., Troy, NY
fYear
2007
fDate
7-10 Oct. 2007
Firstpage
574
Lastpage
579
Abstract
Hybrid nanoelectronics are emerging as one viable option to sustain the Moorepsilas Law after the CMOS scaling limit is reached. One main design challenge in hybrid nanoelectronics is the interface (named as demux) between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in CMOS domain. The prior work on demux design use a single type of devices to realize the demultiplexing function, but hardly provides a satisfactory solution. This work proposes to combine resistor with FET to implement the demux, leading to the so-called hybrid resistor/FET-logic demux. Such hybrid demux architecture can make these two types of devices well complement each other to improve the overall demux design effectiveness. Furthermore, the effects of resistor conductance variability are analyzed and evaluated based on computer simulations.
Keywords
CMOS integrated circuits; demultiplexing equipment; integrated circuit design; logic circuits; demux design; highly dense nanowires; hybrid CMOS/nanodevice circuits; hybrid nanoelectronics; hybrid resistor/FET-logic demultiplexer architecture design; nanodevice crossbars; Circuits; Computer architecture; Demultiplexing; Diodes; FETs; Moore´s Law; Nanoelectronics; Nanowires; Resistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer Design, 2007. ICCD 2007. 25th International Conference on
Conference_Location
Lake Tahoe, CA
ISSN
1063-6404
Print_ISBN
978-1-4244-1257-0
Electronic_ISBN
1063-6404
Type
conf
DOI
10.1109/ICCD.2007.4601955
Filename
4601955
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