Key Factors in Reducing Soft Errors in Mega-Bit Drams: Funneling and Scalability

The funneling phenomena in ¿-particle induced soft errors are investigated using a 3-D device simulator and a new experimental method. The scope of this paper includes descriptions of: 1) scalability of funneling length(size effects and proximity effects), 2) effects of reduced supply voltages 3) barrier effect in n+-p structure, and 4) influence of source/drain n+ diffusion layer in a switching MOS device. A new funneling length model different from flu\´s model is proposed. It was also found that a "scaling law" for soft errors exists which determines a limitation of planar and trench cells.