DocumentCode
2615701
Title
Electron mobility model for silicon carbide inversion layers
Author
Zeng, Yu Anne ; White, Marvin H.
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
118
Lastpage
119
Abstract
This paper presents, a physically based inversion layer electron mobility model which takes into account the combined effects of surface roughness and coulomb scattering the two main mechanisms limiting the electron mobility in SiC MOSFETs. The MOSFET was fabricated on an aluminium-implanted surface and the transfer characteristics are analysed, then the corresponding transconductance curves are compared.
Keywords
MOSFET; electron mobility; semiconductor device models; semiconductor process modelling; silicon compounds; surface roughness; wide band gap semiconductors; Al; SiC; SiC MOSFET; aluminium-implanted surface; coulomb scattering; electron mobility model; silicon carbide inversion layers; surface roughness; transconductance; Electron mobility; MOSFET circuits; Particle scattering; Power MOSFET; Rough surfaces; Silicon carbide; Surface roughness; Surface treatment; Temperature; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272022
Filename
1272022
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