DocumentCode
2615702
Title
"Measurement of Silicon Strength as Affected by Wafer Back Processing"
Author
Hawkins, George ; Berg, Howard ; Mahalingam, Mali ; Lewis, Gary ; Lofgran, Lynn
Author_Institution
Motorola, Inc., Semiconductor Products Sector M.S. B-136, 5005 East McDowell Road, Phoenix, Arizona 85008. Phone (602) 244-3006
fYear
1987
fDate
31868
Firstpage
216
Lastpage
223
Abstract
The distribution of strength of silicon chips has been measured by bending a chip between a soft ball and pad. The chip strength is controlled by flaws introduced by processing and the critical flaws can be located and analyzed after the chip breaks. The flaw sizes can be predicted reasonably well from the fracture toughness of silicon. Wafer back etching strengthens the chip, but the response depends on whether the wafer was lapped or ground.
Keywords
Circuits; Etching; Power dissipation; Probability distribution; Semiconductor device measurement; Semiconductor device packaging; Semiconductor devices; Silicon; Thermal expansion; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1987. 25th Annual
Conference_Location
San Diego, CA, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1987.362182
Filename
4208716
Link To Document