• DocumentCode
    2615702
  • Title

    "Measurement of Silicon Strength as Affected by Wafer Back Processing"

  • Author

    Hawkins, George ; Berg, Howard ; Mahalingam, Mali ; Lewis, Gary ; Lofgran, Lynn

  • Author_Institution
    Motorola, Inc., Semiconductor Products Sector M.S. B-136, 5005 East McDowell Road, Phoenix, Arizona 85008. Phone (602) 244-3006
  • fYear
    1987
  • fDate
    31868
  • Firstpage
    216
  • Lastpage
    223
  • Abstract
    The distribution of strength of silicon chips has been measured by bending a chip between a soft ball and pad. The chip strength is controlled by flaws introduced by processing and the critical flaws can be located and analyzed after the chip breaks. The flaw sizes can be predicted reasonably well from the fracture toughness of silicon. Wafer back etching strengthens the chip, but the response depends on whether the wafer was lapped or ground.
  • Keywords
    Circuits; Etching; Power dissipation; Probability distribution; Semiconductor device measurement; Semiconductor device packaging; Semiconductor devices; Silicon; Thermal expansion; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1987. 25th Annual
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1987.362182
  • Filename
    4208716