DocumentCode
2615722
Title
A new edge termination technique for SiC power devices
Author
Hu, Shuntao ; Sheng, Kuang
Author_Institution
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
122
Lastpage
123
Abstract
In this paper, a new technique utilizing dielectric mesa is proposed for SiC power devices to address the existing termination challenges associated with oxide breakdown and implantation induced reverse leakage.
Keywords
electric breakdown; power semiconductor devices; semiconductor device breakdown; semiconductor device reliability; silicon compounds; wide band gap semiconductors; SiC; SiC power devices; dielectric mesa; edge termination method; implantation induced reverse leakage; oxide breakdown; Breakdown voltage; Design optimization; Dielectric breakdown; Dielectric devices; Electric breakdown; Electrodes; Permittivity; Power engineering and energy; Power engineering computing; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272024
Filename
1272024
Link To Document