Title :
Unique determination of AlGaAs/GaAs HBT´s small-signal equivalent circuit parameters
Author :
Der-Woei Wu ; Miller, D.L. ; Fukuda, M. ; Yong-Hoon Yun
Author_Institution :
Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
Abstract :
A new parameter extraction technique for heterojunction bipolar transistors (HBTs) is described. Utilizing a novel low frequency extraction algorithm, the intrinsic elements and the resistive parasitics are obtained. The overall small-signal equivalent circuit of HBTs is then determined based on those extracted element values. This technique advances current equivalent circuit modeling capability of HBTs by minimizing the interactive computer optimization/simulation process and removing the need of special test structures.<>
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; electronic engineering computing; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; AlGaAs-GaAs; HBT; III-V semiconductor; S-parameters; device design; intrinsic elements; low frequency extraction algorithm; minimised computer simulation; parameter extraction technique; resistive parasitics; small-signal equivalent circuit parameters; Circuit testing; Contact resistance; Equations; Equivalent circuits; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit interconnections; Parasitic capacitance; Transconductance;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1393-3
DOI :
10.1109/GAAS.1993.394456
