• DocumentCode
    2615741
  • Title

    A new lateral insulated gate bipolar transistor for suppressing parasitic thyristor latch-up by employing a folded gate

  • Author

    Oh, Jae-Keun ; Ha, Min-Woo ; Choi, Yearn-lk ; Han, Min-Koo

  • Author_Institution
    Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
  • fYear
    2003
  • fDate
    10-12 Dec. 2003
  • Firstpage
    124
  • Lastpage
    125
  • Abstract
    In this paper, a new LIGBT which suppresses the parasitic thyristor latch-up without sacrificing forward voltage drop by employing folded gate structure. It is verified the proposed device by three dimensional device simulator ISE TCAD.
  • Keywords
    current density; elemental semiconductors; insulated gate bipolar transistors; semiconductor device models; silicon; technology CAD (electronics); thyristors; Si; TCAD; folded gate; lateral insulated gate bipolar transistor; parasitic thyristor latch-up; three dimensional structure; two dimensional hole current density; Bipolar transistors; Current density; Degradation; Educational institutions; Etching; Insulated gate bipolar transistors; Ion implantation; Silicon; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2003 International
  • Print_ISBN
    0-7803-8139-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2003.1272025
  • Filename
    1272025
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2615741