DocumentCode
2615749
Title
Effect of circuit parameters and topology on intermodulation in MESFET circuits
Author
Webster, D.R. ; Parker, A.E. ; Haigh, D.G. ; Scott, J.B.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
fYear
1993
fDate
10-13 Oct. 1993
Firstpage
255
Lastpage
258
Abstract
Third-order intermodulation intercept is a very important criterion in communication circuits and the authors present a preliminary investigation of the mechanisms responsible. It is shown that interaction of the intrinsic MESFET second-order nonlinearity with linear circuit and parasitic components can cause significant distortion. MESFET output conductance is shown to also cause an interaction effect. Hence, intercept points quite different from those predicted by standard device characterization techniques can be obtained. Some regions of enhanced performance have been identified. Circuit topology also plays a key role in determining distortion. Some experimental results are given.<>
Keywords
MESFET integrated circuits; amplifiers; circuit analysis computing; intermodulation distortion; network parameters; network topology; MESFET circuits; circuit parameters; circuit topology effect; common-source amplifier; communication circuits; device-component interaction; distortion; interaction effect; linear circuit components; output conductance; parasitic components; regions of enhanced performance; second-order nonlinearity; third-order intermodulation intercept; Circuit topology; Educational institutions; Equations; FETs; Frequency; Linearity; MESFET circuits; Parasitic capacitance; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location
San Jose, CA, USA
Print_ISBN
0-7803-1393-3
Type
conf
DOI
10.1109/GAAS.1993.394457
Filename
394457
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