DocumentCode :
2615749
Title :
Effect of circuit parameters and topology on intermodulation in MESFET circuits
Author :
Webster, D.R. ; Parker, A.E. ; Haigh, D.G. ; Scott, J.B.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
fYear :
1993
fDate :
10-13 Oct. 1993
Firstpage :
255
Lastpage :
258
Abstract :
Third-order intermodulation intercept is a very important criterion in communication circuits and the authors present a preliminary investigation of the mechanisms responsible. It is shown that interaction of the intrinsic MESFET second-order nonlinearity with linear circuit and parasitic components can cause significant distortion. MESFET output conductance is shown to also cause an interaction effect. Hence, intercept points quite different from those predicted by standard device characterization techniques can be obtained. Some regions of enhanced performance have been identified. Circuit topology also plays a key role in determining distortion. Some experimental results are given.<>
Keywords :
MESFET integrated circuits; amplifiers; circuit analysis computing; intermodulation distortion; network parameters; network topology; MESFET circuits; circuit parameters; circuit topology effect; common-source amplifier; communication circuits; device-component interaction; distortion; interaction effect; linear circuit components; output conductance; parasitic components; regions of enhanced performance; second-order nonlinearity; third-order intermodulation intercept; Circuit topology; Educational institutions; Equations; FETs; Frequency; Linearity; MESFET circuits; Parasitic capacitance; Transconductance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1393-3
Type :
conf
DOI :
10.1109/GAAS.1993.394457
Filename :
394457
Link To Document :
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