Title :
A comparison of the AlN annealing cap for 4H SiC annealed in a nitrogen versus an argon atmosphere
Author :
Derenge, M.A. ; Jones, K.A. ; Kirchner, K. ; Ervin, M.
Author_Institution :
US Army Res. Lab., Maryland Univ., College Park, MD, USA
Abstract :
In this paper, AlN films annealing cap for 4H SiC in a nitrogen and argon atmosphere and also the samples are imaged by SEM and AFM to examine the surface morphology of the AlN film. The results obtained from this experiments are compared.
Keywords :
III-V semiconductors; aluminium compounds; annealing; argon; atomic force microscopy; nitrogen; scanning electron microscopy; semiconductor thin films; silicon compounds; surface morphology; wide band gap semiconductors; 1500 degC; 1600 degC; 30 min; 4H SiC annealing; AFM; AlN; AlN annealing; SEM; SiC; pulse laser deposition; surface morphology; Annealing; Argon; Atmosphere; Etching; Nitrogen; Pulsed laser deposition; Silicon carbide; Surface morphology; Temperature; Thermal degradation;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272026
