Title :
Temperature dependency of MOSFET device characteristics in 4H- and 6H-silicon carbide (SiC)
Author :
Hasanuzzama, M. ; Islam, Syed K. ; Tolbert, Leon M. ; Alam, Mohmmad T.
Abstract :
An analytical model for lateral MOSFET that includes the effects of temperature variation in 4H- and 6H-SiC poly-type is presented in this paper. The model includes the effect of temperature variation on the threshold voltage, the carrier mobility, the body leakage current, and the drain and source contact region resistances. MOSFET device behavior in 4H-SiC is also simulated and compared with 6H-SiC material system.
Keywords :
MOSFET; carrier mobility; leakage currents; semiconductor device models; silicon compounds; wide band gap semiconductors; 4H-silicon carbide; 6H-silicon carbide; MOSFET device properties; SiC; carrier mobility; contact region resistances; leakage current; temperature dependence; threshold voltage; Analytical models; Current measurement; Electrical resistance measurement; Immune system; Leakage current; MOSFET circuits; Predictive models; Silicon carbide; Temperature dependence; Threshold voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272029
