A high-gain HEMT monolithic downconverter for X-band direct broadcast satellite applications

Author

Joshin, K. ; Hidaka, N. ; Hikosaka, K.

Author_Institution

Fujitsu Lab. Ltd., Atsugi, Japan

fYear

1993

fDate

10-13 Oct. 1993

Firstpage

229

Lastpage

232

Abstract

A high-gain X-band HEMT monolithic downconverter consisting of a low-noise RF amplifier, mixer, local oscillator, and IF amplifier has been fabricated using the conventional 0.3-/spl mu/m-gauge AlGaAs/GaAs HEMT technology. The HEMTs high gain performance allowed the use of simple circuit configurations on a 1.3/spl times/2 mm/sup 2/ chip. The fabricated converter achieved a conversion gain of 50 dB and a noise figure of 4 dB.<>

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; MMIC frequency convertors; MMIC mixers; MMIC oscillators; aluminium compounds; direct broadcasting by satellite; field effect MMIC; gallium arsenide; intermediate-frequency amplifiers; microwave amplifiers; microwave oscillators; 11.7 to 12 GHz; 4 dB; 50 dB; AlGaAs-GaAs; HEMT monolithic downconverter; IF amplifier; III-V semiconductor; X-band; conversion gain; direct broadcast satellite applications; high-gain; local oscillator; low-noise RF amplifier; mixer; Circuits; Gallium arsenide; HEMTs; Inductors; Local oscillators; Low-noise amplifiers; MESFETs; Optical amplifiers; Radiofrequency amplifiers; Satellite broadcasting;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1393-3

Type

conf

DOI

10.1109/GAAS.1993.394463

Filename

394463