Title :
A high-gain HEMT monolithic downconverter for X-band direct broadcast satellite applications
Author :
Joshin, K. ; Hidaka, N. ; Hikosaka, K.
Author_Institution :
Fujitsu Lab. Ltd., Atsugi, Japan
Abstract :
A high-gain X-band HEMT monolithic downconverter consisting of a low-noise RF amplifier, mixer, local oscillator, and IF amplifier has been fabricated using the conventional 0.3-/spl mu/m-gauge AlGaAs/GaAs HEMT technology. The HEMTs high gain performance allowed the use of simple circuit configurations on a 1.3/spl times/2 mm/sup 2/ chip. The fabricated converter achieved a conversion gain of 50 dB and a noise figure of 4 dB.<>
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; MMIC frequency convertors; MMIC mixers; MMIC oscillators; aluminium compounds; direct broadcasting by satellite; field effect MMIC; gallium arsenide; intermediate-frequency amplifiers; microwave amplifiers; microwave oscillators; 11.7 to 12 GHz; 4 dB; 50 dB; AlGaAs-GaAs; HEMT monolithic downconverter; IF amplifier; III-V semiconductor; X-band; conversion gain; direct broadcast satellite applications; high-gain; local oscillator; low-noise RF amplifier; mixer; Circuits; Gallium arsenide; HEMTs; Inductors; Local oscillators; Low-noise amplifiers; MESFETs; Optical amplifiers; Radiofrequency amplifiers; Satellite broadcasting;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1393-3
DOI :
10.1109/GAAS.1993.394463
