DocumentCode
2615856
Title
A study of interface charges on the operation of 4H silicon carbide (SiC) static induction transistors (SITs)
Author
Fuerherm, James ; Zeng, Yu Anne ; White, Marvin H.
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear
2003
fDate
10-12 Dec. 2003
Firstpage
134
Lastpage
135
Abstract
In this paper, we study about the interface charges on the operation of 4H silicon carbide static induction transistors. The structure of SIT provides high breakdown voltage and high current density between the source and drain terminals. Influence of oxide charge in the ´ shoulder´ oxide region on the operation of a 4H-SiC SIT has been studied. The SIT device has been modeled and simulated with varying SIT dimensions, varying gate and drain voltage.
Keywords
carrier mobility; current density; semiconductor device breakdown; semiconductor device models; silicon compounds; static induction transistors; wide band gap semiconductors; SIT device models; SIT dimensions; SIT structure; SiC; breakdown voltage; current density; drain voltage; gate voltage; interface charges; oxide charge; silicon carbide static induction transistors; Electrons; Fingers; Frequency; MOSFETs; Schottky diodes; Silicon carbide; Temperature; Thermal conductivity; Transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2003 International
Print_ISBN
0-7803-8139-4
Type
conf
DOI
10.1109/ISDRS.2003.1272030
Filename
1272030
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