Title :
A study of interface charges on the operation of 4H silicon carbide (SiC) static induction transistors (SITs)
Author :
Fuerherm, James ; Zeng, Yu Anne ; White, Marvin H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
In this paper, we study about the interface charges on the operation of 4H silicon carbide static induction transistors. The structure of SIT provides high breakdown voltage and high current density between the source and drain terminals. Influence of oxide charge in the ´ shoulder´ oxide region on the operation of a 4H-SiC SIT has been studied. The SIT device has been modeled and simulated with varying SIT dimensions, varying gate and drain voltage.
Keywords :
carrier mobility; current density; semiconductor device breakdown; semiconductor device models; silicon compounds; static induction transistors; wide band gap semiconductors; SIT device models; SIT dimensions; SIT structure; SiC; breakdown voltage; current density; drain voltage; gate voltage; interface charges; oxide charge; silicon carbide static induction transistors; Electrons; Fingers; Frequency; MOSFETs; Schottky diodes; Silicon carbide; Temperature; Thermal conductivity; Transistors; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272030
