Title :
Photoluminescence studies of anodic-oxide-induced intermixing of GaAs/AlGaAs quantum well heterostructures
Author :
Burke, P.T. ; Gal, M. ; Yuan, Shu ; Kim, Yong ; Jagadish, C.
Author_Institution :
Sch. of Phys., New South Wales Univ., Kensington, NSW, Australia
Abstract :
A novel impurity-free interdiffusion technique, anodic-oxide-induced intermixing is demonstrated. A pulsed anodization of GaAs/AlGaAs quantum well heterostructures (QWH) with subsequent rapid thermal annealing (RTA) at 900°C, is studied. Blue shifts of up to 72meV have been observed by photoluminescence (PL) in intermixed samples with no significant broadening of the linewidth and good retention of PL intensity. The blueshift in the PL spectra is shown to increase with no sign of saturation with RTA times up to 120 seconds
Keywords :
III-V semiconductors; aluminium compounds; anodisation; chemical interdiffusion; gallium arsenide; photoluminescence; rapid thermal annealing; semiconductor quantum wells; spectral line shift; 120 s; 900 C; GaAs-AlGaAs; GaAs/AlGaAs quantum well heterostructures; PL intensity retention; RTA; anodic-oxide-induced intermixing; blue shifts; impurity-free interdiffusion technique; photoluminescence; pulsed anodization; Atomic beams; Atomic layer deposition; Australia; Gallium arsenide; MOCVD; Measurement standards; Oxidation; Performance evaluation; Photoluminescence; Rapid thermal annealing;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610087
