A miniaturized W-band monolithic dual-gate InAlAs/InGaAs HEMT mixer

Author

Kwon, Y. ; Pavlidis, D. ; Marsh, P. ; Ng, G.T. ; Brock, T. ; Streit, D.

Author_Institution

Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA

fYear

1993

fDate

10-13 Oct. 1993

Firstpage

215

Lastpage

218

Abstract

A miniaturized W-band dual-gate HEMT mixer has been demonstrated using InAlAs/InGaAs HEMT technology. The circuit provides on-chip RF/LO coupling and integrates the HEMT, RF/LO/IF matching circuits and bias lines on a 1 mm /spl times/ 1 mm chip. The dual-gate mixer showed a conversion loss of 3 dB with 5 dBm LO power and had an RF return loss better than 10 dB over a wide range of frequencies (87 GHz-100 GHz). The LO-to-RF isolation was better than 17 dB for W-band operation.<>

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; millimetre wave frequency convertors; millimetre wave mixers; 3 dB; 87 to 100 GHz; HEMT mixer; III-v semiconductor; InAlAs-InGaAs; MIMIC; RF/LO/IF matching circuits; W-band monolithic dual-gate; bias lines; conversion loss; miniaturized; on-chip RF/LO coupling; Circuits; FETs; HEMTs; Indium compounds; Indium gallium arsenide; MIM capacitors; Mixers; RF signals; Radio frequency; Satellite broadcasting;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1393-3

Type

conf

DOI

10.1109/GAAS.1993.394466

Filename

394466