A V-band monolithic InP HEMT down converter [for satellite communication]

Author

Chang, K.W. ; Wang, H. ; Lai, R. ; Lo, D. ; Berenz, J.

Author_Institution

Div. of Electron. Technol., TRW, Redondo Beach, CA, USA

fYear

1993

fDate

10-13 Oct. 1993

Firstpage

211

Lastpage

214

Abstract

The authors report a monolithic V-band downconverter implemented using 0.1 /spl mu/m InAlAs-InGaAs-InP HEMT technology. The 5.0/spl times/3.0 mm/sup 2/ MMIC contains a V-band three-stage low noise amplifier, a single-balanced diode mixer, and an IF distributed amplifier. The noise figure of the LNA is less than 3 dB with an associated gain of more than 24 dB between 56 and 64 GHz. The complete downconverter demonstrates a conversion gain of more than 21 dB for the same frequency range with an LO drive of 10 dBm at 54 GHz. Total DC power consumption of the downconverter is less than 32 mW.<>

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; distributed amplifiers; field effect MIMIC; gallium arsenide; indium compounds; intermediate-frequency amplifiers; millimetre wave amplifiers; millimetre wave frequency convertors; millimetre wave mixers; satellite communication; 0.1 micron; 21 to 24 dB; 54 GHz; 56 to 64 GHz; HEMT down converter; I-gate; IF distributed amplifier; III-V semiconductor; InAlAs-InGaAs-InP; MIMIC; MMIC; monolithic V-band downconverter; satellite communication links; single-balanced diode mixer; three-stage low noise amplifier; Diodes; Distributed amplifiers; Frequency conversion; HEMTs; Indium phosphide; Low-noise amplifiers; MMICs; Mixers; Noise figure; Satellites;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-1393-3

Type

conf

DOI

10.1109/GAAS.1993.394467

Filename

394467