Title :
A V-band monolithic InP HEMT down converter [for satellite communication]
Author :
Chang, K.W. ; Wang, H. ; Lai, R. ; Lo, D. ; Berenz, J.
Author_Institution :
Div. of Electron. Technol., TRW, Redondo Beach, CA, USA
Abstract :
The authors report a monolithic V-band downconverter implemented using 0.1 /spl mu/m InAlAs-InGaAs-InP HEMT technology. The 5.0/spl times/3.0 mm/sup 2/ MMIC contains a V-band three-stage low noise amplifier, a single-balanced diode mixer, and an IF distributed amplifier. The noise figure of the LNA is less than 3 dB with an associated gain of more than 24 dB between 56 and 64 GHz. The complete downconverter demonstrates a conversion gain of more than 21 dB for the same frequency range with an LO drive of 10 dBm at 54 GHz. Total DC power consumption of the downconverter is less than 32 mW.<>
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; distributed amplifiers; field effect MIMIC; gallium arsenide; indium compounds; intermediate-frequency amplifiers; millimetre wave amplifiers; millimetre wave frequency convertors; millimetre wave mixers; satellite communication; 0.1 micron; 21 to 24 dB; 54 GHz; 56 to 64 GHz; HEMT down converter; I-gate; IF distributed amplifier; III-V semiconductor; InAlAs-InGaAs-InP; MIMIC; MMIC; monolithic V-band downconverter; satellite communication links; single-balanced diode mixer; three-stage low noise amplifier; Diodes; Distributed amplifiers; Frequency conversion; HEMTs; Indium phosphide; Low-noise amplifiers; MMICs; Mixers; Noise figure; Satellites;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1993. Technical Digest 1993., 15th Annual
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-1393-3
DOI :
10.1109/GAAS.1993.394467
